S and C band Over 100W GaN HEMT 1-chip high power amplifiers with cell division configuration

Yamanaka, Koji ; Iyomasa, Kazuhiro ; Ohtsuka, Hiroshi ; Nakayama, Masatoshi ; Tsuyama, Yoshinori ; Kunii, Tetsuo ; Kamo, Yoshitaka ; Takagi, Tadashi (2005) S and C band Over 100W GaN HEMT 1-chip high power amplifiers with cell division configuration. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

In this paper, GaN HEMT 1-chip high power amplifiers at S and C bands are presented, which are featured by the cell division configuration. Spurious oscillations, which often occur for large gate periphery microwave transistors, were suppressed by dividing 8 transistor cells in a single chip into 4 blocks each consisting of 2 cells and placing isolation resistors on matching circuits. 120W and 140W output powers were successfully extracted from single chip GaN HEMT transistors with 3.8W/mm and 2.8W/mm power densities at S and C bands, respectively. These are top-level output powers from single chip GaN HEMT transistors over 3GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Yamanaka, Koji
Iyomasa, Kazuhiro
Ohtsuka, Hiroshi
Nakayama, Masatoshi
Tsuyama, Yoshinori
Kunii, Tetsuo
Kamo, Yoshitaka
Takagi, Tadashi
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:21
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