A 3.2 W coplanar single-device X-band ampliﬁer with GaAs HBT

Lenk, F. ; Klockenhoff, H. ; Kurpas, P. ; Maaßdorf, A. ; Wurﬂ, H. J. ; Heinrich, W. (2005) A 3.2 W coplanar single-device X-band ampliﬁer with GaAs HBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Abstract

High-power GaInP/GaAs HBTs with high breakdown voltage for X-Band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic ampliﬁer is realized. For a single 12-ﬁnger device with 2x70 µm 2 emitter ﬁnger size, an out put power of 3.2 W at 9 GHz with 47%PAE is achieved. Index Terms—Heterojunction bipolar transistors, MMIC power ampliﬁers.

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