AlGaN/GaN heterostructure field-effect transistors

Adesida, I. ; Ping, A. T. ; Redwing, J. (1999) AlGaN/GaN heterostructure field-effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

A brief overview of materials. Processing, technologies, and performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) are presented. Sate-of-the-art results on the dc, microwave, power, and noise characteristics of these devices on sapphire and SiC substrates are discussed. It is evident that AlGaN/GaN HFETs will be used for high power applications at microwave frequencies in the future. It is also possible that these devices will find applications for low noise amplifiers.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Adesida, I.
Ping, A. T.
Redwing, J.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:29
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