Adesida, I. ; Ping, A. T. ; Redwing, J.
(1999)
AlGaN/GaN heterostructure field-effect transistors.
In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract
A brief overview of materials. Processing, technologies, and performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) are presented. Sate-of-the-art results on the dc, microwave, power, and noise characteristics of these devices on sapphire and SiC substrates are discussed. It is evident that AlGaN/GaN HFETs will be used for high power applications at microwave frequencies in the future. It is also possible that these devices will find applications for low noise amplifiers.
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