A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications

Chang, E. Y. and Lee, Di-Houng and Lai, Yeong-Lin and Chen, S.H. (1999) A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

A high efficiency 2.4-V operation dual delta doped AlGaAs/ InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for personal communications has been developed. The 20.16mm gate width device operating at a drain bias of 2.4 V at 1.9 GHz gives an output power of 30.0 dBm and a power added efficiency over 60%. The high efficiency at 2.4 V bias is attributed to the dual delta doped PHEMT structure which has high drain current and high electron mobility and to the shrinkage of the device layout which results in the low knee voltage and low source resistance of the device.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Chang, E. Y.
Lee, Di-Houng
Lai, Yeong-Lin
Chen, S.H.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:29
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