Abstract

A high efficiency 2.4-V operation dual delta doped AlGaAs/ InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for personal communications has been developed. The 20.16mm gate width device operating at a drain bias of 2.4 V at 1.9 GHz gives an output power of 30.0 dBm and a power added efficiency over 60%. The high efficiency at 2.4 V bias is attributed to the dual delta doped PHEMT structure which has high drain current and high electron mobility and to the shrinkage of the device layout which results in the low knee voltage and low source resistance of the device.