V-band on-wafer noise parameter measurements

Lahdes, M. ; Tuovinen, J. (1998) V-band on-wafer noise parameter measurements. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Full text disponibile come:
[thumbnail of GAAS_98_008.pdf]
Anteprima
Documento PDF
Download (2MB) | Anteprima

Abstract

Different noise parameter measurement methods and receiver requirements are discussed. A set-up for on-wafer V-band noise parameter measurements using so called cold-source method is presented. The operation of the system is demonstrated by showing experimental results of a InP HEMT (58-62 GHz) and a passive component (51-66 GHz).

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Lahdes, M.
Tuovinen, J.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:31
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^