V-band on-wafer noise parameter measurements

Lahdes, M. ; Tuovinen, J. (1998) V-band on-wafer noise parameter measurements. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

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Abstract

Different noise parameter measurement methods and receiver requirements are discussed. A set-up for on-wafer V-band noise parameter measurements using so called cold-source method is presented. The operation of the system is demonstrated by showing experimental results of a InP HEMT (58-62 GHz) and a passive component (51-66 GHz).

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