Abstract

The purpose of this paper is to show the capabilities of the dual gate transistors for low noise amplification in the millimeter wave range. Single and dual gate 0.12um AlGaAs/InGaAs/GaAs pseudomorphic HEMTs have been designed and realized for this study. On wafer S-parameters have been performed up to 110GHz. The current gain cutoff frequency fT is 70GHz and the maximum available gain is 13dB at 60GHz. A very low minimum noise figure of ldB is obtained with an associated gain of 20dB at 18GHz. Some others good performances are presented.