A Universal Test Set for DC and Pulsed I-V Characterization of Various Semiconductor Devices

Kwaspen, J.J.M. (2002) A Universal Test Set for DC and Pulsed I-V Characterization of Various Semiconductor Devices. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and DC + pulse measurements on 2 and 3 terminal semiconductor devices, the later ones in 3 selectable common-configurations. Tests can be done on packaged devices and on-wafer; temperature dependency studied and time-depended features like trapping effects in GaN-based HEMTs. Novel is that once the overall test setup is assembled, no external hardware changes are neccesary for a full (automated) characterization of all quadrants of the I-V plot, and that in the pulse mode the V and I sampling point already can be at 8 ns from the leading edge, allowing measurements with very limited average device temperature increase.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Poster)
Autori
AutoreAffiliazioneORCID
Kwaspen, J.J.M.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:39
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