A new auto-coherent bias dependent charge model for MESFETs and HEMTs

Valkov, S. ; Derzkii, D. ; Temcamani, F. ; Pouvil, P. (1996) A new auto-coherent bias dependent charge model for MESFETs and HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.
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Abstract

A nonlinear model of MESFETs and HEMTs capacitances suitable for implementation in commercial circuit design software is presented. The model is based upon the deter­mination of the nonlinear bias dependent charge equations. A comparison is made between capacitance values coming from PHEMT characterization and capacitance values derived from the model.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Valkov, S.
Derzkii, D.
Temcamani, F.
Pouvil, P.
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DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:40
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