A new auto-coherent bias dependent charge model for MESFETs and HEMTs

Valkov, S. ; Derzkii, D. ; Temcamani, F. ; Pouvil, P. (1996) A new auto-coherent bias dependent charge model for MESFETs and HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1996, 5-6 June 1996, Paris, France.

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Abstract

A nonlinear model of MESFETs and HEMTs capacitances suitable for implementation in commercial circuit design software is presented. The model is based upon the determination of the nonlinear bias dependent charge equations. A comparison is made between capacitance values coming from PHEMT characterization and capacitance values derived from the model.

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