Microstructuring of ion-implanted GaAs for high temperature sensor applications

Miao, J. ; Hartnagel, H. L. ; Rück, D. ; Fricke, K. ; Würfl, J. ; Grüb, A. (1994) Microstructuring of ion-implanted GaAs for high temperature sensor applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

Results are presented using deep ion implantation to microstructure the GaAs for sensor applications at in­creased ambient temperatures. Three selective etch­ing methods were used to micromachine ion-implanted GaAs with different implantation parameters and sub­sequent treatments. The corresponding membranes and cantilevers are fabricated.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Miao, J.
Hartnagel, H. L.
Rück, D.
Fricke, K.
Würfl, J.
Grüb, A.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:41
URI

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