Microstructuring of ion-implanted GaAs for high temperature sensor applications

Miao, J. ; Hartnagel, H. L. ; Rück, D. ; Fricke, K. ; Würfl, J. ; Grüb, A. (1994) Microstructuring of ion-implanted GaAs for high temperature sensor applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

Results are presented using deep ion implantation to microstructure the GaAs for sensor applications at increased ambient temperatures. Three selective etching methods were used to micromachine ion-implanted GaAs with different implantation parameters and subsequent treatments. The corresponding membranes and cantilevers are fabricated.

Abstract

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