Recent Development in Device Technology for Integrated THz-Circuits

Hartnagel, H.L. ; Lin, C.I. ; Rodriguez, M. ; Ichizli, V. ; Saglam, M. ; Szeliga, P. (2000) Recent Development in Device Technology for Integrated THz-Circuits. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

Recently there is significantly increasing interest in the development of THz devices and circuits. Different from the MMIC device and circuit technologies, THz devices approach to the electrical limit of semiconductors and passive THz circuit elements have much less dimension tolerance. Therefore, device and circuit technologies concerning to such limitations have to be reconsidered and modified. In this paper a review of the important device technologies used in the THz frequency regime is presented.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Hartnagel, H.L.
Lin, C.I.
Rodriguez, M.
Ichizli, V.
Saglam, M.
Szeliga, P.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:40
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