Recent Development in Device Technology for Integrated THz-Circuits

Hartnagel, H.L. ; Lin, C.I. ; Rodriguez, M. ; Ichizli, V. ; Saglam, M. ; Szeliga, P. (2000) Recent Development in Device Technology for Integrated THz-Circuits. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

Recently there is significantly increasing interest in the development of THz devices and circuits. Different from the MMIC device and circuit technologies, THz devices approach to the electrical limit of semiconductors and passive THz circuit elements have much less dimension tolerance. Therefore, device and circuit technologies concerning to such limitations have to be reconsidered and modified. In this paper a review of the important device technologies used in the THz frequency regime is presented.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Hartnagel, H.L.
Lin, C.I.
Rodriguez, M.
Ichizli, V.
Saglam, M.
Szeliga, P.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:40
URI

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