A high efficiency GaAs FET high power amplifier applicable in handy phone equipment

Matsumoto, K. ; Furutani, N. ; Fukaya, J. ; Hirano, Y. ; Fukuden, N. ; Ohta, K. (1990) A high efficiency GaAs FET high power amplifier applicable in handy phone equipment. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

Recenty a handy telephone has been developed and is going to replace a mobile telephone. A handy telephone utilizing batteries uses most of its DC power for its transmitter power amplifier. Therefore the transmitter power amplifier app­licable to a handy telephone has to be high efficiency (low power consumption). Also spurious specification of a telephone needs a stable transmitter power ampli fier. In this paper,we will describe the design philosophy of a high stability and high efficiency GaAs FET power amplifier applicable to a handy telephone. Also we will report the performance of the high stability and high efficiency GaAs FET high power amplifier we developed.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Matsumoto, K.
Furutani, N.
Fukaya, J.
Hirano, Y.
Fukuden, N.
Ohta, K.
Subjects
DOI
Deposit date
17 Feb 2006
Last modified
17 Feb 2016 14:47
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