Matsumoto, K. ; Furutani, N. ; Fukaya, J. ; Hirano, Y. ; Fukuden, N. ; Ohta, K.
(1990)
A high efficiency GaAs FET high power amplifier applicable in handy phone equipment.
In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract
Recenty a handy telephone has been developed and is going to replace a mobile telephone. A handy telephone utilizing batteries uses most of its DC power for its transmitter power amplifier. Therefore the transmitter power amplifier applicable to a handy telephone has to be high efficiency (low power consumption). Also spurious specification of a telephone needs a stable transmitter power ampli fier. In this paper,we will describe the design philosophy of a high stability and high efficiency GaAs FET power amplifier applicable to a handy telephone. Also we will report the performance of the high stability and high efficiency GaAs FET high power amplifier we developed.
Abstract
Recenty a handy telephone has been developed and is going to replace a mobile telephone. A handy telephone utilizing batteries uses most of its DC power for its transmitter power amplifier. Therefore the transmitter power amplifier applicable to a handy telephone has to be high efficiency (low power consumption). Also spurious specification of a telephone needs a stable transmitter power ampli fier. In this paper,we will describe the design philosophy of a high stability and high efficiency GaAs FET power amplifier applicable to a handy telephone. Also we will report the performance of the high stability and high efficiency GaAs FET high power amplifier we developed.
Tipologia del documento
Documento relativo ad un convegno o altro evento
(Atto)
Autori
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:47
URI
Altri metadati
Tipologia del documento
Documento relativo ad un convegno o altro evento
(Atto)
Autori
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:47
URI
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