Results from electrical caracterization and reliability tests of GaAs/GaAlAs HEMT's

Brambilla, P. and Magistrali, F. and Sangalli, M. and Canali, C. and Zanoni, E. and Castellaneta, G. and Marchetti, F. (1990) Results from electrical caracterization and reliability tests of GaAs/GaAlAs HEMT's. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract

GaAs/GaAlAs HEMT's are rapidly replacing conventional FET's for applications where high gain and low noise figure at high frequencies are needed; for this reason we began a qualification program on them, with the goal of evaluating the possible criticalities that could affect long term performances. The program includes electrical characterization, thermal storages and operating life-tests on commercially available devices, coming from four different manufacturers. During the electrical characterization we especially focused on "kink" effect, concluding that it should be ascribed to trapping/detrapping mechanisms in the AlGaAs layer; even if this phenomenon is peculiar of HEMT's, we found no evidence of any possible detrimental effect on reliability. Thermal storage at 250 °C caused Schottky barrier degradation in the devices with Ni or Ti used as interdiffusion barrier between Al and GaAs; these degradations affect devices performances but cannon be considered peculiar of HEMT's technology, as they were found in low noise FET's too. During biased life-test at Tch = 175 °C, no significant parametric degradation was found up to 2500 test hours.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Brambilla, P.
Magistrali, F.
Sangalli, M.
Canali, C.
Zanoni, E.
Castellaneta, G.
Marchetti, F.
Subjects
DOI
Deposit date
02 Feb 2006
Last modified
17 Feb 2016 14:49
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