Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FET's

Filicori, F. ; Vannini, G. ; Santarelli, A. ; Sanchez, A.M. ; Tazon, A. ; Newport, Y. (1995) Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FET's. IEEE Transactions on Microwave Theory and Techniques, 43 (12). pp. 2972-2981. ISSN 0018-9480
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Abstract

The modeling of low-frequency dispersive effects due to surface state densities, deep level traps and thermal phenomena plays an important role in the large-signal performance prediction of III-V FET's. This paper describes an empirical modeling approach to accurately predict deviations between static and dynamic drain current characteristics caused by dispersive effects in III-V devices operating at microwave frequencies. It is based on reasonable assumptions and can easily be embedded in nonlinear FET models to be used in Harmonic-Balance tools for circuit analysis and design. Experimental and simulated results, for HEMT's and GaAs MESFET's of different manufacturers, that confirm the validity of the new approach, are presented and discussed together with the characterization procedures required

Abstract
Document type
Article
Creators
CreatorsAffiliationORCID
Filicori, F.
Vannini, G.
Santarelli, A.
Sanchez, A.M.
Tazon, A.
Newport, Y.
Keywords
III-V semiconductors, Schottky gate field effect transistors, deep levels, electron traps, equivalent circuits, gallium arsenide, high electron mobility transistors, microwave field effect transistors, semiconductor device models, surface states
Subjects
ISSN
0018-9480
DOI
Deposit date
29 Mar 2006
Last modified
31 Oct 2012 11:46
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