Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FET's

Filicori, F. ; Vannini, G. ; Santarelli, A. ; Sanchez, A.M. ; Tazon, A. ; Newport, Y. (1995) Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FET's. IEEE Transactions on Microwave Theory and Techniques, 43 (12). pp. 2972-2981. ISSN 0018-9480
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Abstract

The modeling of low-frequency dispersive effects due to surface state densities, deep level traps and thermal phenomena plays an important role in the large-signal performance prediction of III-V FET's. This paper describes an empirical modeling approach to accurately predict deviations between static and dynamic drain current characteristics caused by dispersive effects in III-V devices operating at microwave frequencies. It is based on reasonable assumptions and can easily be embedded in nonlinear FET models to be used in Harmonic-Balance tools for circuit analysis and design. Experimental and simulated results, for HEMT's and GaAs MESFET's of different manufacturers, that confirm the validity of the new approach, are presented and discussed together with the characterization procedures required

Abstract
Tipologia del documento
Articolo
Autori
AutoreAffiliazioneORCID
Filicori, F.
Vannini, G.
Santarelli, A.
Sanchez, A.M.
Tazon, A.
Newport, Y.
Parole chiave
III-V semiconductors, Schottky gate field effect transistors, deep levels, electron traps, equivalent circuits, gallium arsenide, high electron mobility transistors, microwave field effect transistors, semiconductor device models, surface states
Settori scientifico-disciplinari
ISSN
0018-9480
DOI
Data di deposito
29 Mar 2006
Ultima modifica
31 Ott 2012 11:46
URI

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