Abstract

The modeling of low-frequency dispersive effects due to surface state densities, deep level traps and thermal phenomena plays an important role in the large-signal performance prediction of III-V FET's. This paper describes an empirical modeling approach to accurately predict deviations between static and dynamic drain current characteristics caused by dispersive effects in III-V devices operating at microwave frequencies. It is based on reasonable assumptions and can easily be embedded in nonlinear FET models to be used in Harmonic-Balance tools for circuit analysis and design. Experimental and simulated results, for HEMT's and GaAs MESFET's of different manufacturers, that confirm the validity of the new approach, are presented and discussed together with the characterization procedures required