A nonlinear integral model of electron devices for HB circuit analysis

Filicori, F. ; Vannini, G. ; Monaco, V.A. (1992) A nonlinear integral model of electron devices for HB circuit analysis. IEEE Transactions on Microwave Theory and Techniques, 40 (7). pp. 1456-1465. ISSN 0018-9480
Full text available as:
[img]
Preview
PDF
License: Creative Commons Attribution Non-commercial

Download (991kB) | Preview

Abstract

A technology-independent large-signal model of electron devices, the nonlinear integral model (NIM), is proposed. It is rigorously derived from the Volterra series under basic assumptions valid for most types of electron devices and is suitable for harmonic-balance circuit analysis. Unlike other Volterra-based approaches, the validity of the NIM is not limited to weakly nonlinear operation. In particular, the proposed model allows the large-signal dynamic response of an electron device to be directly computed on the basis of data obtained either by conventional measurements or by physics-based numerical simulations. In this perspective, it provides a valuable tool for linking accurate device simulations based on carrier transport physics and harmonic-balance circuit analysis algorithms. Simulations and experimental results, which confirm the validity of the NIM, are also presented

Abstract
Document type
Article
Creators
CreatorsAffiliationORCID
Filicori, F.
Vannini, G.
Monaco, V.A.
Keywords
nonlinear network analysis, semiconductor device models
Subjects
ISSN
0018-9480
DOI
Deposit date
29 Mar 2006
Last modified
31 Oct 2012 11:47
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^