On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices

Raffo, A. ; Santarelli, A. ; Traverso, P.A. ; Vannini, G. ; Filicori, F. (2004) On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices. In: 63rd ARFTG Conference Digest Spring, 2004, 11 giugno 2004, Fort Worth, Texas.
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Abstract

Large-signal dynamic modelling of 111-V FETs cannot he simply based on DC i/v characteristics, when accurate performance prediction is needed. In fact, dispersive phenomena due to self-heating and/or traps (surface state densities and deep level traps) must be taken into account since they cause important deviations in the low-frequency dynamic drain current. Thus, static drain current characteristics should he replaced with a suitable model which also accounts for low-frequency dispersive effects. The research community has proposed different modelling approaches and quite often a characterisation by means of pulsed i/v measurement systems has been suggested as the more appropriate for the identification of lowfrequency drain current models. In the paper, a new largesignal measurement setup is presented which is based on simple low-frequency sinusoidal excitations and it is easily reproducible with conventional general-purpose lab instrumentation. Moreover, the proposed setup is adopted in the paper to extract a hackgating-like model for dispersive phenomena

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Raffo, A.
Santarelli, A.
Traverso, P.A.
Vannini, G.
Filicori, F.
Parole chiave
field effect transistors, semiconductor device characterisation, large-signal modeling, dispersive phenomena
Settori scientifico-disciplinari
DOI
Data di deposito
07 Apr 2006
Ultima modifica
16 Mag 2011 12:02
URI

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