Design optimisation of ultra-short gate HEMTS using MONTE CARLO simulation

Mateos, Javier and González, Tomas and Pardo, Daniel (2000) Design optimisation of ultra-short gate HEMTS using MONTE CARLO simulation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

By using a Monte Carlo simulator the static and dynamic characteristics of a 50 nm gate AlInAs/GaInAs δ−doped HEMTs are investigated. The Monte Carlo model includes some important effects that are indis-pensable when trying to reproduce the real behaviour of the devices, such as degeneracy, presence of surface charges, T-shape of the gate, presence of dielectrics and contact resistances. Among the large quantity of design parameters that enter into the fabrication of the devices, we have studied the influence on their per-formance of two factors: the doping level of the δ -doped layer and the length of the recess. We will show that the first one has a very important effect on the cutoff frequency and other important figures of merit of the transistor, and its value has to be carefully chosen. Conversely, we have also checked that the influence of the recess length is quite slight.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Mateos, Javier
González, Tomas
Pardo, Daniel
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:42
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