Modelling of responsivity of INP-PIN photodiode for studying optical-microwave frequency conversion processes

Galwas, Bogdan A. ; Dawidczyk, Jaroslaw ; Chyzh, Aleksander ; Malyshev, Sergei A. (2000) Modelling of responsivity of INP-PIN photodiode for studying optical-microwave frequency conversion processes. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

The paper presents investigations of optical-microwave frequency conversion processes for InP-PIN photodiode. The planar InGaAsP/InGaAs/InP heterostructure PIN photodiode operating at 1.3 µm has been used in an optoelectronic mixer configuration. The nonlinear model of the PIN photodiode responsivity has been assumed. The mathematical analysis of frequency conversion process and results of simulation are presented. The obtained results of calculation and results of measurements are compared and discussed.

Abstract
Document type
Conference or Workshop Item (Poster)
Creators
CreatorsAffiliationORCID
Galwas, Bogdan A.
Dawidczyk, Jaroslaw
Chyzh, Aleksander
Malyshev, Sergei A.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:43
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