Abstract

The paper presents investigations of optical-microwave frequency conversion processes for InP-PIN photodiode. The planar InGaAsP/InGaAs/InP heterostructure PIN photodiode operating at 1.3 µm has been used in an optoelectronic mixer configuration. The nonlinear model of the PIN photodiode responsivity has been assumed. The mathematical analysis of frequency conversion process and results of simulation are presented. The obtained results of calculation and results of measurements are compared and discussed.