The First 0.15um MHEMT 6 ”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations

Chertouk, M. ; Chang, W.D. ; Yuan, C.G. ; Chen, C.H. ; Tu, D.W. (2003) The First 0.15um MHEMT 6 ”GaAs Foundry Service: Highly Reliable Process for 3 V Drain Bias Operations. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

Lattice matched InAlAs/InGaAs/InP HEMTs have performance advantages over more commonly used GaAs PHEMTs due to the high electron velocity and carrier density >1 @. However,manufacturing these devices at high production level is difficult due to the limited size,high cost,and brittle nature of the InP substrate.Growing InAlAs/InGaAs structures metamorphically on GaAs substrates can overcome these substrate issues.However,the ultimate acceptance of MHEMT in commercial application depends upon its providing higher performance compared to other technologies at the same cost.In order to address the needs for both high performance and low manufacturing cost,for the first time,an highly reliable 4 mil 0.15 um MHEMT process has been developed on six inch GaAs substrates with high yield and reproducibility for both power and noise applications.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Chertouk, M.
Chang, W.D.
Yuan, C.G.
Chen, C.H.
Tu, D.W.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:50
URI

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