Abstract

Lattice matched InAlAs/InGaAs/InP HEMTs have performance advantages over more commonly used GaAs PHEMTs due to the high electron velocity and carrier density >1 @. However,manufacturing these devices at high production level is difficult due to the limited size,high cost,and brittle nature of the InP substrate.Growing InAlAs/InGaAs structures metamorphically on GaAs substrates can overcome these substrate issues.However,the ultimate acceptance of MHEMT in commercial application depends upon its providing higher performance compared to other technologies at the same cost.In order to address the needs for both high performance and low manufacturing cost,for the first time,an highly reliable 4 mil 0.15 um MHEMT process has been developed on six inch GaAs substrates with high yield and reproducibility for both power and noise applications.