Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE

Sutton, William E. and Pavlidis, Dimitris and Lahrèche, Hacène and Damilano, Benjamin and Langer, Robert (2003) Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

The large signal characteristics of 1 Pm long S-gate AlGaN/GaN HEMTs on resistive silicon substrates have been measured and analyzed.The HEMTs demonstrated maximum transconductance and current density values of 350 mS/mm and 1,200 mA/mm respectively.High current gain and maximum power gain frequencies ft and fmax were measured at 25 GHz and 43 GHz .Large signal gain and power density values of 16 dBand 1.7 W/mm for a two-finger 1x75 Pm 2 HEMT respectively were observed at 5 GHz.The device also exhibited PAE values as high as 40%with P1dB around +2.0 dBm for Class AB operation.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Sutton, William E.
Pavlidis, Dimitris
Lahrèche, Hacène
Damilano, Benjamin
Langer, Robert
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:52
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