Abstract

The large signal characteristics of 1 Pm long S-gate AlGaN/GaN HEMTs on resistive silicon substrates have been measured and analyzed.The HEMTs demonstrated maximum transconductance and current density values of 350 mS/mm and 1,200 mA/mm respectively.High current gain and maximum power gain frequencies ft and fmax were measured at 25 GHz and 43 GHz .Large signal gain and power density values of 16 dBand 1.7 W/mm for a two-finger 1x75 Pm 2 HEMT respectively were observed at 5 GHz.The device also exhibited PAE values as high as 40%with P1dB around +2.0 dBm for Class AB operation.