A fully integrated silicon-germanium X-Band VCO

Masini, Leonardo ; Pozzoni, Massimo ; Caliumi, Alberto ; Tomasini, Luciano ; Morigi, Damiana ; Lemaire, Frederic (2001) A fully integrated silicon-germanium X-Band VCO. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

The design and realisation of a fully integrated Silicon Germanium (SiGe) X-Band Voltage Controlled Oscillator (VCO) is presented. It performs low phase noise and 10% tuning bandwidth at low voltage bias supply. The VCO, comprising integrated inductors and output transformers, is implemented in a SiGe technology which is suitable for high volume production. The features of this VCO, the adopted methodology and the herein proven potential of the technology make this work a good starting point for the design of next generation totally integrated fast PLL’s. The paper will describe also the architectures chosen and the design techniques adopted.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Masini, Leonardo
Pozzoni, Massimo
Caliumi, Alberto
Tomasini, Luciano
Morigi, Damiana
Lemaire, Frederic
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:33
URI

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