Influence of dispersive effects on large-signal models based on differential parameter integration

Zucchelli, G. ; Santarelli, A. ; Raffo, A. ; Vannini, G. ; Filicori, F. (2003) Influence of dispersive effects on large-signal models based on differential parameter integration. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

In the paper is shown that,when devices are strongly affected by low-frequency dispersion effects, simply deriving the i/v characteristics through direct integration of bias-dependent differential parameters leads to results which are only locally self-consistent and coherent with empirical data.Dynamic drain current deviations due to charge trapping and self-heating phenomena in FETs, introducing a more complex dependence on average applied voltages and power in the dynamic i/v characteristics,must be taken into account by means of accurate approaches, such as the recently proposed equivalent voltage model [2 ]. Instead,integration of the low-frequency differentialparameters in a suitably modified equivalent voltage domain is shown to be consistent with device physics. Experimental evidence is provided in the paper.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Zucchelli, G.
Santarelli, A.
Raffo, A.
Vannini, G.
Filicori, F.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:53
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