InP Bipolar Transistors:High Speed Circuits and Manufacturable Submicron Fabrication Processes

Rodwell, M. ; Scott, D. ; Urteaga, M. ; Dahlström, M. ; Griffith, Z. ; Wei, Y. ; Parthasarathy, N. ; Kim, YM ; Pierson, R. ; Rowell, P. ; Brar, B. (2003) InP Bipolar Transistors:High Speed Circuits and Manufacturable Submicron Fabrication Processes. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

Compared to SiGe,InP HBTs offer superior electron transport but inferior scaling and parasitic reduction.Figures of merit for mixed-signal ICs are developed and HBT scaling laws for improved circuit speed are introduced.Device and circuit results are summarized, including >370 GHz f W &fmax HBTs,174 GHz amplifiers,75 GHz power amplifiers,87 GHz static frequency dividers, and 8 GHz '6 ADCs.To compete with 100 nm SiGe processes,InP must be similarly scaled.Device structures and initial results are shown for two processes intended for high-yield fabrication of low-parasitic InP HBTs at ~300 nm emitter width.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Rodwell, M.
Scott, D.
Urteaga, M.
Dahlström, M.
Griffith, Z.
Wei, Y.
Parthasarathy, N.
Kim, YM
Pierson, R.
Rowell, P.
Brar, B.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:54
URI

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