Abstract

Compared to SiGe,InP HBTs offer superior electron transport but inferior scaling and parasitic reduction.Figures of merit for mixed-signal ICs are developed and HBT scaling laws for improved circuit speed are introduced.Device and circuit results are summarized, including >370 GHz f W &fmax HBTs,174 GHz amplifiers,75 GHz power amplifiers,87 GHz static frequency dividers, and 8 GHz '6 ADCs.To compete with 100 nm SiGe processes,InP must be similarly scaled.Device structures and initial results are shown for two processes intended for high-yield fabrication of low-parasitic InP HBTs at ~300 nm emitter width.