Electric field dependency of traps in mesfet/hemt devices

Rodriguez-Tellez, J. ; Ali, N.T. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A. (2001) Electric field dependency of traps in mesfet/hemt devices. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

A new measurement procedure for observing the dependence of the frequency dispersion effect on electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a statistically based pulse I/V measurement system for observing the memory effect in these devices. The results indicate, possibly for the first time, the true extent of the effects of the traps in these devices.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Rodriguez-Tellez, J.
Ali, N.T.
Fernandez, T.
Mediavilla, A.
Tazon, A.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:33
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