Electric field dependency of traps in mesfet/hemt devices

Rodriguez-Tellez, J. ; Ali, N.T. ; Fernandez, T. ; Mediavilla, A. ; Tazon, A. (2001) Electric field dependency of traps in mesfet/hemt devices. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

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Abstract

A new measurement procedure for observing the dependence of the frequency dispersion effect on electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a statistically based pulse I/V measurement system for observing the memory effect in these devices. The results indicate, possibly for the first time, the true extent of the effects of the traps in these devices.

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