A High Performance 2.4GHz Linear Power Amplifier in Enhancement-mode GaAs pHEMT Technology

Chow, Yut-Hoong and Chong, Thomas (2004) A High Performance 2.4GHz Linear Power Amplifier in Enhancement-mode GaAs pHEMT Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

This paper describes the design and realization of a high performance linear power amplifier in the 2.4GHz band for the IEEE 802.11b/g WLAN (Wireless Local Area Network) and ISM (Industrial Scientific and Medical) applications using a proprietary 0.5um enhancement-mode Pseudomorphic High-Electron-Mobility Transistor (e-pHEMT) technology. The amplifier exhibits a linear power output of 18.5dBm at 5%Error Vector magnitude (EVM) and efficiency of 30% at 2.45GHz at 3.3V supply in a chip-on-board (COB) module. The design also includes an integrated power detector.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Chow, Yut-Hoong
Chong, Thomas
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:08
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