The Integrated 2W High Voltage/High Power 0.12-µm RF CMOS Power Amplifier

Wu, L. and Tao, R. and Basaran, U. and Luger, J. and Dettmann, I. and Berroth, M. (2004) The Integrated 2W High Voltage/High Power 0.12-µm RF CMOS Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

A 2W HiVP power amplifier for GSM mobile communication system is designed using 0.12-µm CMOS process. To solve the problem of low breakdown voltage in deep-submicron CMOS technology, the new High Voltage/High Power (HiVP) device configuration is used. With HiVP configuration, a large voltage can be divided by several devices, so that the voltage drop on each device is reduced. Hence the low-cost CMOS technology can be adopted for the design of power amplifier which will be used in a mobile phone. In this paper, an analytical overview of theory and practice of the HiVP power amplifier are discussed.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Wu, L.
Tao, R.
Basaran, U.
Luger, J.
Dettmann, I.
Berroth, M.
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:10
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