Abstract

The authors present an analytic, empirical largesignal model for the efficient simulation of Hetero Field Effect Transistors. The model has been extracted and verified for a 0.15µm AlGaAs/InGaAs/GaAs pHEMT as well as for a 0.2µm InP/InGaAs/InP pHEMT technology. It uses a new set of chargeconservative capacitance expressions as well as a dispersion model for accurate description of both static and dynamic IV characteristics. A large voltage regime is covered, ranging from the sub-threshold to forward gate conduction and linear to saturation operating regions. Typical HFET effects like self-heating, gain compression, impact ionization as well as particularities of capacitance characteristics are included. Model verification is carried out for static IV, high-frequency S-parameters as well as one- and two-tone power measurements at microwave frequencies for both types of transistors.