SiGe:C HBT technology for advanced BiCMOS processes.

Magnee, P. H. C. ; Hurkx, G. A. M. ; Agarwal, P. ; van Noort, W. D. ; Donkers, J. J. T. M. ; Melai, J. ; Aksen, E. ; Vanhoucke, T. ; Vijayaraghavan, M. N. (2004) SiGe:C HBT technology for advanced BiCMOS processes. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

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Abstract

In this paper we discuss the present status of SiGe:C heterojunction bipolar transistors (HBTs), together with some Figures-of-Merit (FOMs) and their relation to technology. We also discuss new innovative solutions to the relatively low breakdown voltage and high-frequency substrate losses of Si technologies, when compared to III-V based technologies.

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