Low Power Single-Ended Active Frequency Doubler for a 60 GHz-Band Application

Masuda, Toru ; Landen, Lars ; Zirath, Herbert (2002) Low Power Single-Ended Active Frequency Doubler for a 60 GHz-Band Application. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

The design and characterization of a 28-56 GHz frequency doubler based on a commercial foundry GaAs pHEMT process is described. To realize low power consumption and high conversion gain with small input power at the same time, we employed a simple circuit topology composed of a single-ended active frequency doubler and a frequency selective buffer amplifier. The doubler chip occupies 2 mm 2 chip area and delivers 4 dBm with an input power of 0 dBm. The excellent unwanted harmonics suppression of 29 dB and low power operation of 40 mW were obtained.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Masuda, Toru
Landen, Lars
Zirath, Herbert
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:37
URI

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