Analysis of Correlation between Breakdown Characteristics and Gate-Lag Phenomena in Narrowly-Recessed-Gate

Mitani, Y. ; Kasai, D. ; Horio, K. (2002) Analysis of Correlation between Breakdown Characteristics and Gate-Lag Phenomena in Narrowly-Recessed-Gate. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

Effects of surface states on breakdown and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, in a case with relatively high densities of surface states, the breakdown voltage could be drastically lowered when introducing a narrowly-recessed-gate structure. It is suggested that there is a trade-off relationship between raising the breakdown voltage and reducing the gate-lag.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Mitani, Y.
Kasai, D.
Horio, K.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:37
URI

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