Physical mechanisms limiting the manufacturing yield of millimeter-wave power InP HEMTs

Krupenin, S. ; Blanchard, R. R. ; Somerville, M. H. ; del Alamo, J. A. ; Duh, K. G. ; Chao, P. C. (1998) Physical mechanisms limiting the manufacturing yield of millimeter-wave power InP HEMTs. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Full text disponibile come:
[thumbnail of GAAS_98_095.pdf]
Anteprima
Documento PDF
Download (2MB) | Anteprima

Abstract

We have developed a methodology to diagnose the physical mechanisms limiting the manufacturing yield of millimeter-wave power InAlAs/InGaAs HEMTs on InP. A statistical analysis was carried out on DC figures of merit obtained from a large number of actual devices on an experimental wafer. Correlation studies and a Principal Component Analysis (PCA) of the results indicated that variations in Si delta-doping concentration introduced during MBE accounted for more than half of the manufacturing variance. Variations in the gate-source distance that is determined by the electron-beam alignment in the gate formation process were the second leading source of manufacturing variance.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Krupenin, S.
Blanchard, R. R.
Somerville, M. H.
del Alamo, J. A.
Duh, K. G.
Chao, P. C.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Feb 2006
Ultima modifica
17 Feb 2016 14:35
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^