Abstract

We have developed a methodology to diagnose the physical mechanisms limiting the manufacturing yield of millimeter-wave power InAlAs/InGaAs HEMTs on InP. A statistical analysis was carried out on DC figures of merit obtained from a large number of actual devices on an experimental wafer. Correlation studies and a Principal Component Analysis (PCA) of the results indicated that variations in Si delta-doping concentration introduced during MBE accounted for more than half of the manufacturing variance. Variations in the gate-source distance that is determined by the electron-beam alignment in the gate formation process were the second leading source of manufacturing variance.