Microstructuring of ion-implanted GaAs for high temperature sensor applications

Miao, J. ; Hartnagel, H. L. ; Rück, D. ; Fricke, K. ; Würfl, J. ; Grüb, A. (1994) Microstructuring of ion-implanted GaAs for high temperature sensor applications. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

Results are presented using deep ion implantation to microstructure the GaAs for sensor applications at in­creased ambient temperatures. Three selective etch­ing methods were used to micromachine ion-implanted GaAs with different implantation parameters and sub­sequent treatments. The corresponding membranes and cantilevers are fabricated.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Miao, J.
Hartnagel, H. L.
Rück, D.
Fricke, K.
Würfl, J.
Grüb, A.
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DOI
Deposit date
16 Feb 2006
Last modified
17 Feb 2016 14:41
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