Abstract

High-power and high efficiency GaAs power MESFETs have been developed using a Carbon co-implantation technique.The active channel layer is realized by multiple Silicon implantation with and without Carbon co-implantation in the tail region of the Si donor distribution. Measurements performed on a 4 Watt power devices in the 5.9-6.4 GHz band show typical P.A.E of 29% with an intercept point of 47.8 dBm in class A operation compared to the values of 22% and 46.5 dBm of the same devices realized without any p-buried layer.