On the bias point selection for improved performance in low intermodulation distortion amplifiers

Pedro, Jose Carlos ; Perez, Jorge (1994) On the bias point selection for improved performance in low intermodulation distortion amplifiers. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
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Abstract

Conventional design techniques for low in-band intermodulation distortion GaAs MESFET amplifiers, generally indicate a bias-point equal or close to Idss/2 [1,2]. This quiescent point choice results from the will to maximise output current swing without severe distortion, which by no means necessarily implies a minimisation of small-signal intermodulation distortion. The aim of this paper is to review this two types of distortion, and to give precise rules for bias point selection in the design of low IMD amplifiers.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
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AutoreAffiliazioneORCID
Pedro, Jose Carlos
Perez, Jorge
Settori scientifico-disciplinari
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Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:44
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