Abstract

Conventional design techniques for low in-band intermodulation distortion GaAs MESFET amplifiers, generally indicate a bias-point equal or close to Idss/2 [1,2]. This quiescent point choice results from the will to maximise output current swing without severe distortion, which by no means necessarily implies a minimisation of small-signal intermodulation distortion. The aim of this paper is to review this two types of distortion, and to give precise rules for bias point selection in the design of low IMD amplifiers.