Broadband 0.3-7 GHz MESFET amplifier with low noise figure up to fT/2 of the active device

Lott, U. ; Baumberger, W. (1994) Broadband 0.3-7 GHz MESFET amplifier with low noise figure up to fT/2 of the active device. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
Full text disponibile come:
[thumbnail of GAAS_94_091.pdf]
Anteprima
Documento PDF
Download (1MB) | Anteprima

Abstract

A broadband amplifier has been designed with a low noise figure up to 7 GHz using a standard 0.8 µm GaAs MESFET process (fT = 13 GHz). An active match common gate input stage, a common source output stage and a combination of resistive and reactive loads give a gain of 10 +/- 1 dB and a noise figure below 5 dB over the 0.3 to 7 GHz frequency range.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Lott, U.
Baumberger, W.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Feb 2006
Ultima modifica
17 Feb 2016 14:44
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^