Broadband 0.3-7 GHz MESFET amplifier with low noise figure up to fT/2 of the active device

Lott, U. ; Baumberger, W. (1994) Broadband 0.3-7 GHz MESFET amplifier with low noise figure up to fT/2 of the active device. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.

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Abstract

A broadband amplifier has been designed with a low noise figure up to 7 GHz using a standard 0.8 µm GaAs MESFET process (fT = 13 GHz). An active match common gate input stage, a common source output stage and a combination of resistive and reactive loads give a gain of 10 +/- 1 dB and a noise figure below 5 dB over the 0.3 to 7 GHz frequency range.

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